SUCCESSFUL CHEMICAL DE-LAYERING
PROTOCOLS FOR IC DIE TO DATE
g
NOMINAL STRUCTURE
- Copper 8 layer Die Stack
TOOL DESIGN CRITERIA -
g
-
to enable selective Cu removal with no cross contamination
of other metal layers resulting from etchant leakage through vias
Cu Etch -
NH
4
OH
2 pts /
H
2
O
2
2pts /
DI
1 pt
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