| What happens if
we bias the die during chemical etch?
Can bias variation of Carrier Medium
allow even more control etch reaction kinetics?
Can we control reaction rates
electrochemically?
Can etch specificity be increased by
substituting of elements lower in ECS for the material being etched?
(e.g. Au substitution of AI)
Can end-point determination of etch be
determined by independent analytical approaches, e.g. TOF mass
spectrometry? |
